MA2S077 for band switching features ? low forward dynamic resistance r f ? less voltage dependence of diode capacitance c d ? ss-mini type package, allowing downsizing of equipment and automatic insertion through the taping package absolute maximum ratings t a = 25 c unit : mm parameter symbol rating unit reverse voltage (dc) v r 35 v forward current (dc) i f 100 ma operating ambient temperature * t opr ? 25 to + 85 c storage temperature t stg ? 55 to + 150 c parameter symbol conditions min typ max unit reverse current (dc) i r v r = 33 v 0.01 100 na forward voltage (dc) v f i f = 100 ma 0.92 1.0 v diode capacitance c d v r = 6 v, f = 1 mhz 0.9 1.2 pf forward dynamic resistance * r f i f = 2 ma, f = 100 mhz 0.65 0.85 ? electrical characteristics t a = 25 c note) 1 } rated input/output frequency: 100 mhz y 2 } *: r f measuring instrument: yhp model 4191a rf impedance analyzer marking symbol: s note) * : maximum ambient temperature during operation 1 : anode 2 : cathode ss-mini type package (2-pin) 1.7 0.1 0.8 0.1 0.7 0.1 0 to 0.1 0.27 + 0.05 ? 0.02 0.27 + 0.05 ? 0.02 1.3 0.1 0.15 min. 0.15 min. 0.13 + 0.05 ? 0.02 1 of 1 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification ty epitaxial planar type
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